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  february 2007 rev 5 1/17 17 STP100NF04 stb100nf04 n-channel 40v - 0.0043 ? - 120a - to-220 - d 2 pa k stripfet? ii power mosfet general features standard threshold drive 100% avalanche tested description this power mosfet is the latest development of stmicroelectronics unique ?single feature size?? strip-based process. the resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. applications switching application internal schematic diagram type v dss r ds(on) i d pw STP100NF04 40v < 0.0046 ? 120a 300w stb100nf04 40v < 0.0046 ? 120a 300w 1 3 1 2 3 d2pak to-220 www.st.com order codes part number marking package packaging stb100nf04 b100nf04 d2pak tape & reel STP100NF04 p100nf04 to-220 tube
contents: stb100nf04 - STP100NF04 2/17 contents: 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 2.2 spice thermal model . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 3 test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 5 packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 6 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
stb100nf04 - stp100nf 04 electrical ratings 3/17 1 electrical ratings table 1. absolute maximum ratings symbol parameter value unit v ds drain-source voltage (v gs =0) 40 v v gs gate-source voltage 20 v i d (1) 1. current limited by package drain-current (continuous) at tc=25c 120 a i d (1) drain-current (continuous) at tc=100c 120 a i dm (2) 2. pulse width limited by safe operating area. drain-current (pulsed) 480 a p tot total dissipation at tc=25c 300 w derating factor 2 w/c dv/dt (3) 3. i sd 120a, di/dt 300a/s, v dd < v (br)dss. tj < tjmax peak diode recovery voltage slope 6 v/ns e as (4) 4. starting tj=25c, i d =60a, v dd =30v single pulse avalanche energy 1.2 j t j t stg operating junction temperature storage temperature -55 to 175 c table 2. thermal resistance symbol parameter value unit rthj-case thermal resistance junction-case max 0.5 c/w rthj-pcb thermal resistance junction-pcb max (see figure 13 )c/w rthj-amb thermal resistance junction-ambient (free air) max 62.5 c/w t l maximum lead temperature for soldering purpose 300 c
electrical characteristics stb100nf04 - STP100NF04 4/17 2 electrical characteristics (t case =25c unless otherwise specified) table 3. on/off symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d =250a, v gs =0 40 v i dss zero gate voltage drain current (v gs =0) v ds =max rating v ds =max rating tc=125c 1 10 a a i gss gate-body leakage current (v ds =0) v gs =20v 100 na v gs(th) gate threshold voltage v ds =v gs, i d =250a 24v r ds(on) static drain-source on resistance v gs =10v, i d =50a 0.0043 0.0046 ? table 4. dynamic symbol parameter test conditions min typ. max. unit gfs forward transconductance v ds =15v, i d =50a 150 s c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds =25v, f=1mhz,v gs =0 5100 1300 160 pf pf pf q g q gs q gd total gate charge gate-source charge gate-drain charge v dd =32v, i d =120a v gs =10v 110 35 70 150 nc nc nc t d(on) t r t d(off) t f turn-on delay time rise time turn-off delay time fall time v dd =20v, i d =60a r g =4.7 ? , v gs =10v (see figure 21 ) 35 220 80 50 ns ns ns ns
stb100nf04 - STP100NF04 electrical characteristics 5/17 table 5. source drain diode symbol parameter test conditions min. typ. max. unit i sd i sdm (1) 1. pulse width limited by safe operating area. source-drain current source-drain current (pulsed) 120 480 a a v sd (2) 2. pulsed: pulse duration=300s, duty cycle 1.5% forward on voltage i sd =120a, v gs =0 1.3 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd =120a, v dd =20v, di/dt=100a/s, tj=150c 75 185 5 ns nc a
electrical characteristics stb100nf04 - STP100NF04 6/17 2.1 electrical characterist ics (curves) figure 1. power derating vs. tc figure 2. max id current vs. tc figure 3. output characteristics figure 4. transfer characteristics figure 5. transconductance figure 6. static drain-source on resistance
stb100nf04 - STP100NF04 electrical characteristics 7/17 figure 7. gate charge vs. gate-source voltag e figure 8. capacitance variations figure 9. normalized gate threshold voltage vs. temperature figure 10. normalized on resistance vs. temperature figure 11. source-drain diode forward characteristics figure 12. normalized bvdss vs. temperature
electrical characteristics stb100nf04 - STP100NF04 8/17 figure 13. thermal resistance rthj-pcb vs. pcb copper area figure 14. thermal impedance figure 15. max power dissipation vs. pcb copper area figure 16. safe operating area
stb100nf04 - STP100NF04 electrical characteristics 9/17 figure 17. allowable iav vs. time in avalanche the previous curve give the safe operating area for unclamped inductive loads, single pulse or repetitive, under the following conditions: p d(ave) = 0.5*(1.3*bv dss *i av ) e as(ar) = p d(ave) * t av where: i av is the allowable current in avalanche p d(ave) is the average power dissipation in avalanche (single pulse) t av is the time in avalanche to de rate above 25c, at fixed i av , the following equation must be applied: i av =2*(t jmax - t case ) / (1.3*bv dss * z th ) where: z th = k*r th is the value coming from normalized thermal response at fixed pulse width equal to t av
electrical characteristics stb100nf04 - STP100NF04 10/17 2.2 spice thermal model table 6. spice parameter parameter node value ctherm1 5 - 4 0.011 ctherm1 4 - 3 0.0012 ctherm3 3 - 2 0.05 ctherm4 2 - 1 0.1 rtherm1 5 - 4 0.09 rtherm2 4 - 3 0.02 rtherm3 3 - 2 0.11 rtherm4 2 - 1 0.17 figure 18. spice model schematic
stb100nf04 - STP100NF04 test circuit 11/17 3 test circuit figure 19. unclamped inductive load test circuit figure 20. unclamped inductive waveform figure 21. switching times test circuit for resistive load figure 22. gate charge test circuit figure 23. test circuit for inductive load switching figure 24. switching time waveform
package mechanical data stb100nf04 - STP100NF04 12/17 4 package mechanical data in order to meet environmental requirements, st offers these devices in ecopack? packages. these packages have a lead-free second level interconnect. the category of second level interconnect is marked on the package and on the inner box label, in compliance with jedec standard jesd97. the maximum ratings related to soldering conditions are also marked on the inner box label. ecopack is an st trademark. ecopack specifications are available at: www.st.com
stb100nf04 - STP100NF04 package mechanical data 13/17 dim. mm. inch min. typ max. min. typ. max. a 4.40 4.60 0.173 0.181 b 0.61 0.88 0.024 0.034 b1 1.15 1.70 0.045 0.066 c 0.49 0.70 0.019 0.027 d 15.25 15.75 0.60 0.620 e 10 10.40 0.393 0.409 e 2.40 2.70 0.094 0.106 e1 4.95 5.15 0.194 0.202 f 1.23 1.32 0.048 0.052 h1 6.20 6.60 0.244 0.256 j1 2.40 2.72 0.094 0.107 l 13 14 0.511 0.551 l1 3.50 3.93 0.137 0.154 l20 16.40 0.645 l30 28.90 1.137 ?p 3.75 3.85 0.147 0.151 q 2.65 2.95 0.104 0.116 to-220 mechanical data
package mechanical data stb100nf04 - STP100NF04 14/17 to-247 mechanical data 1 dim. mm. inch min. typ max. min. typ. max. a 4.4 4.6 0.173 0.181 a1 2.49 2.69 0.098 0.106 a2 0.03 0.23 0.001 0.009 b 0.7 0.93 0.027 0.036 b2 1.14 1.7 0.044 0.067 c 0.45 0.6 0.017 0.023 c2 1.23 1.36 0.048 0.053 d 8.95 9.35 0.352 0.368 d1 8 0.315 e 10 10.4 0.393 e1 8.5 0.334 g 4.88 5.28 0.192 0.208 l 15 15.85 0.590 0.625 l2 1.27 1.4 0.050 0.055 l3 1.4 1.75 0.055 0.068 m 2.4 3.2 0.094 0.126 r0.4 0.015 v2 0o 4o d 2 pak mechanical data 3
stb100nf04 - STP100NF04 packaging mechanical data 15/17 5 packaging mechanical data tape and reel shipment d 2 pak footprint * on sales type dim. mm inch min. max. min. max. a 330 12.992 b 1.5 0.059 c 12.8 13.2 0.504 0.520 d 20.2 0795 g 24.4 26.4 0.960 1.039 n 100 3.937 t 30.4 1.197 base qty bulk qty 1000 1000 reel mechanical data dim. mm inch min. max. min. max. a0 10.5 10.7 0.413 0.421 b0 15.7 15.9 0.618 0.626 d 1.5 1.6 0.059 0.063 d1 1.59 1.61 0.062 0.063 e 1.65 1.85 0.065 0.073 f 11.4 11.6 0.449 0.456 k0 4.8 5.0 0.189 0.197 p0 3.9 4.1 0.153 0.161 p1 11.9 12.1 0.468 0.476 p2 1.9 2.1 0.075 0.082 r 50 1.574 t 0.25 0.35 0.0098 0.0137 w 23.7 24.3 0.933 0.956 tape mechanical data
revision history stb100nf04 - STP100NF04 16/17 6 revision history table 7. revision history date revision changes 23-mar-2005 2 new template 01-mar-2006 3 removed i2pak and inserted d2pak. 04-sep-2006 4 new template, no content change 20-feb-2007 5 typo mistake on page 1
stb100nf04 - STP100NF04 17/17 please read carefully: information in this document is provided solely in connection with st products. stmicroelectronics nv and its subsidiaries (?st ?) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described he rein at any time, without notice. all st products are sold pursuant to st?s terms and conditions of sale. purchasers are solely responsible for the choice, selection and use of the st products and services described herein, and st as sumes no liability whatsoever relating to the choice, selection or use of the st products and services described herein. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. i f any part of this document refers to any third party products or services it shall not be deemed a license grant by st for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoev er of such third party products or services or any intellectual property contained therein. unless otherwise set forth in st?s terms and conditions of sale st disclaims any express or implied warranty with respect to the use and/or sale of st products including without limitation implied warranties of merchantability, fitness for a parti cular purpose (and their equivalents under the laws of any jurisdiction), or infringement of any patent, copyright or other intellectual property right. unless expressly approved in writing by an authorized st representative, st products are not recommended, authorized or warranted for use in milita ry, air craft, space, life saving, or life sustaining applications, nor in products or systems where failure or malfunction may result in personal injury, death, or severe property or environmental damage. st products which are not specified as "automotive grade" may only be used in automotive applications at user?s own risk. resale of st products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by st for the st product or service described herein and shall not create or extend in any manner whatsoev er, any liability of st. st and the st logo are trademarks or registered trademarks of st in various countries. information in this document supersedes and replaces all information previously supplied. the st logo is a registered trademark of stmicroelectronics. all other names are the property of their respective owners. ? 2007 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - singapore - spain - sweden - switzerland - united kingdom - united states of america www.st.com


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